Specifications
Product Details
Characteristics of 2N5401 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.6 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 60 to 240
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Complementary NPN transistor
The complementary NPN transistor to the 2N5401 is the 2N5551.
