Specifications
Product Details
Characteristics of 2N5551 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 180 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.6 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 80 to 250
- Transition Frequency, min: 100 MHz
- Noise Figure, max: 8 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Complementary PNP transistor
The complementary PNP transistor to the 2N5551 is the 2N5401.
