The AOD5N50 is a high-voltage N-Channel MOSFET designed for robust performance in AC-DC applications. Engineered with low RDS(on), low input capacitance, and guaranteed avalanche capability, it is suitable for integration into offline power supply designs. This device is built for efficiency and reliability under demanding conditions.

Technical Specifications:

• Drain-Source Voltage (VDS): 500V
• Continuous Drain Current (ID): 5A @ TC=25°C, 3.1A @ TC=100°C
• Static Drain-Source On-Resistance (RDS(on)): ≤1.6Ω @ VGS=10V
• Gate-Source Voltage (VGS): ±30V
• Power Dissipation (PD): 104W @ TC=25°C
• Thermal Resistance:
  • Junction-to-Case (RθJC): 1.2°C/W
  • Junction-to-Ambient (RθJA): 43°C/W
• Operating Temperature Range: -50°C to 150°C
• Switching Characteristics:
  • Turn-On Delay Time: 18ns
  • Rise Time: 32ns
  • Turn-Off Delay Time: 34ns
  • Fall Time: 22ns
• Dynamic Parameters:
  • Input Capacitance (Ciss): 430-670pF
  • Output Capacitance (Coss): 40-80pF
  • Gate Charge (Qg): 9-14nC
• Package: TO-252 (DPAK)