The CSD19536KCS is a high-efficiency N-Channel power MOSFET designed for fast switching and low on-resistance, making it ideal for power conversion, motor control, and high-frequency applications. Featuring advanced TrenchFET™ technology, this product delivers exceptional performance in a compact TO-220 package.

Key Features:

• Low RDS(on) for reduced conduction losses
• Fast switching performance
• Thermally enhanced TO-220 package
• High current handling capability

Technical Specifications:

• Transistor Type: N-Channel
• Drain-to-Source Voltage (VDSS): 100V
• Continuous Drain Current (ID): 100A
• RDS(on): 2.2 mΩ (at VGS = 10V)
• Gate Charge (Qg): 167nC
• Package: TO-220