Specifications
Product Details
Characteristics of S8050 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 25 V
- Collector-Base Voltage, max: 40 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 85 to 300
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Complementary PNP transistor
The complementary PNP transistor to the S8050 is the S8550.
