Specifications
Product Details
Characteristics of S8550 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -25 V
- Collector-Base Voltage, max: -40 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 85 to 300
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Complementary NPN transistor
The complementary NPN transistor to the S8550 is the S8050.
